Abstract: In this work, we will show experimental data of high-speed MZM PIC in module level at 100G/ch and simulated data of SOH-MZM at 200G/ch to prove this SOH-PIC technology is capable for 200G/ch ...
Abstract: Package degradation for high power insulated gate bipolar transistors (IGBTs) modules would seriously affect the operation safety of power electronic converters. Due to the variety of ...
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